Samsung S3F80JB - Manual (Page 291)

EMBEDDED FLASH MEMORY INTERFACE S3F80JB
15-12
PROGRAMMING
A flash memory is programmed in one-byte unit after sector erase. The write operation of programming starts by
‘LDC’ instruction.
The program procedure in user program mode
1. Must erase target sectors before programming.
2. Set Flash Memory User Programming Enable Register (FMUSR) to “10100101B”.
3. Set Flash Memory Control Register (FMCON) to “0101000XB”.
4. Set Flash Memory Sector Address Register (FMSECH and FMSECL) to the sector base address of
destination address to write data.
5. Load a transmission data into a working register.
6. Load a flash memory upper address into upper register of pair working register.
7. Load a flash memory lower address into lower register of pair working register.
8. Load transmission data to flash memory location area on ‘LDC’ instruction by indirectly addressing mode
9. Set Flash Memory User Programming Enable Register (FMUSR) to “00000000B”.
NOTE
In programming mode, it doesn’t care whether FMCON.0’s value is “0” or “1”.