Samsung S3F80JB User Manual
Page 303
S3F80JB
ELECTRICAL DATA (4MHz)
17-3
Table 17-2. D.C. Electrical Characteristics (Continued)
(T
A
= – 25 °C to + 85 °C, V
DD
= 1.7 V to 3.6 V)
Parameter Symbol
Conditions Min
Typ
Max
Unit
Output Low
Voltage
V
OL1
V
DD
= 2.1 V, I
OL
= 12mA
Port 3.1 only
– 0.4 0.5 V
V
OL2
V
DD
= 2.1 V, I
OL
= 5mA
P3.0 and P2.0-2.3
0.4
0.5
V
OL3
V
DD
= 2.35 V, I
OH
= – 1mA
Port0, Port1, P2.4-2.7, P3.4-3.5 and
Port4
0.4
1.0
Input High
Leakage Current
I
LIH1
V
IN
= V
DD
All input pins except I
LIH2
and X
OUT
– – 1
µA
I
LIH2
V
IN
= V
DD ,
X
IN
20
Input Low
Leakage Current
I
LIL1
V
IN
= 0 V
All input pins except I
LIL2
and
X
OUT
– – –
1
µA
I
LIL2
V
IN
= 0 V, X
IN
–
20
Output High
Leakage Current
I
LOH
V
OUT
= V
DD
All output pins
– – 1
µA
Output Low
Leakage Current
I
LOL
V
OUT
= 0 V
All output pins
– – –
1
µA
R
L1
V
IN
= 0 V, V
DD
= 2.1 V
T
A
= 25
°
C, Ports 0–4
40 90 150 k
Ω
Pull-Up
Resistors
R
L2
V
IN
= 0 V, V
DD
= 2.1 V
T
A
= 25
°
C, nRESET
200 700 1200 k
Ω
Feed Back
Resistor
R
FD
V
IN
= V
DD
, V
DD
= 2.1 V
T
A
= 25
°
C, X
IN
500 900 1500 k
Ω