Samsung S3F80JB User Manual

Page 317

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ELECTRICAL DATA (8MHz)

S3F80JB

18-4

Table 18-2. D.C. Electrical Characteristics (Continued)

(T

A

= – 25 °C to + 85 °C, V

DD

= 1.95 V to 3.6 V)

Parameter Symbol

Conditions Min

Typ

Max

Unit

Supply Current
(note)

I

DD1

Operating Mode
V

DD

= 3.6 V

8 MHz crystal

5

9

mA

I

DD2

Idle Mode
V

DD

=3.6 V

8 MHz crystal

1.0

2.5

Stop

Mode

LVD OFF, V

DD

= 3.6 V

1 6

I

DD3

Stop Mode

LVD ON, V

DD

= 3.6 V

10 20

uA

NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.

Table 18-3. Characteristics of Low Voltage Detect Circuit

(T

A

= – 25 °C to + 85 °C)

Parameter Symbol

Conditions Min

Typ

Max

Unit

Hysteresis Voltage of LVD
(Slew Rate of LVD)

∆V

– –

100

300

mV

Low Level Detect Voltage

For Back-Up Mode

LVD –

1.95

2.15

2.35

V

Low Level Detect Voltage

For Flag Indicator

LVD_FLAG –

2.1

2.3

2.5

V

NOTE: The voltage gap between LVD and LVD FLAG is 150mV.

Table 18-4. Data Retention Supply Voltage in Stop Mode

(T

A

= – 25

°C to + 85 °C)

Parameter Symbol

Conditions Min

Typ

Max

Unit

Data Retention Supply
Voltage

V

DDDR

1.5 – 3.6 V

Data Retention Supply
Current

I

DDDR

V

DDDR

= 1.5 V

Stop Mode

– – 1

µA

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