Typical vdd-voh(vdd=3.3v), Ioh(ma) vdd -vo h(v) – Samsung S3F80JB User Manual
Page 320
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S3F80JB
ELECTRICAL DATA (8MHz)
18-7
25 °C
-25 °C
TYPICAL VDD-VOH(VDD=3.3V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0
2
4
6
8
10
12
IOH(mA)
VD
D-
VO
H
(V)
TYPICAL VDD-VOH VS VDD(IOH=
−2.2mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
1.8V
2.3
2.8
3.3
3.8
VDD(V)
VDD-
VOH(
V)
85°C
25°C
−25°C
85°C
25°C
−25°C
Figure 18-5. Typical High-Side Driver (Source) Characteristics (P3.0 and P2.0-2.3)
TYPICAL VDD-VOH(VDD=3.3V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0
1
2
3
4
5
6
IOH(mA)
VDD
-VO
H(V)
TYPICAL VDD-VOH VS VDD(IOH=
−1mA)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
1.8V
2.3
2.8
3.3
3.8
VDD(V)
V
DD-
V
O
H(V
)
85°C
25°C
−25°C
85°C
25°C
−25°C
Figure 18-6. Typical High-Side Driver (Source) Characteristics (Port0, Port1, P2.4-2.7, P3.4-P3.5 and Port4)
NOTE: Figure 18-5 and 18-6 are characterized and not tested on each device.
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