Samsung S3F80JB - Manual (Page 326)

S3F80JB ELECTRICAL DATA (8MHz)
18-13
Minimun Instruction
Clock
1kHz
f OSC
(Main Oscillator Frequency)
1 2 3 4 5
Supply Voltage (V)
Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)
A: 1.95 V, 8 MHz
250 kHz
1MHz
1.5MHz
2 MHz 8 MHz
6 MHz
4 MHz
400 kHz
6 7
500 kHz
A
1 MHz
2 MHz
Figure 18-12. Operating Voltage Range of S3F80JB
Table 18-10. AC Electrical Characteristics for Internal Flash ROM
(T
A
= –25
°C to + 85 °C)
Parameter Symbol Conditions Min Typ Max Unit
Flash Erase/Write/Read Voltage Fewrv V
DD
1.95 3.3 3.6 V
Programming Time (1) Ftp 32 – 60 µS
Sector Erasing Time (2) Ftp1 10 – 20 mS
Chip Erasing Time (3) Ftp2 50 – 100 mS
Data Access Time Ft
RS
V
DD
= 2.0 V – 250 – nS
Number of Writing/Erasing FNwe – 10,000 – – Times
Data Retention Ftdr – 10 – – Years
1. The programming time is the time during which one byte (8-bit) is programmed.
2. The Sector erasing time is the time during which all 128-bytes of one sector block is erased.
3. In the case of S3F80JB, the chip erasing is available in Tool Program Mode only.