Panasonic UP05C8GG User Manual

Up05c8gg, Multi chip discrete

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Multi Chip Discrete

Publication date: January 2008

SJJ00400BED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

UP05C8GG

Silicon NPN epitaxial planar type (Tr)

Silicon epitaxial planar type (CCD load device)

For CCD output circuits

Features

Two elements incorporated into one package (Tr + CCD load device)

Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

Basic Part Number

2SC3932G + CCD load device

Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Tr

Collector-base voltage
(Emitter open)

V

CBO

30

V

Collector-emitter voltage
(Base open)

V

CEO

20

V

Emitter-base voltage
(Collector open)

V

EBO

3

V

Collector current

I

C

50

mA

CCD
load
device

Limiting element voltage

V

max

40

V

Limiting element current

I

max

10

mA

Overall

Total power dissipation

*

P

T

125

mW

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

–55 to +125

°

C

Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm

Package

Code

SSMini6-F2

Pin Name

1: Emitter

4: Source

2: Base

5: Drain

3: Gate

6: Collector

Marking Symbol: 4V

Internal Connection

3

(G)

(S)

4

1

(E)

2

(B)

(C)

6

(D)

5

Tr

FET

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