Panasonic 2SD1823G - Manual

Transistors
1 Publication date: May 2007 SJC00375AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
• High emitter-base voltage (Collector open) V
EBO
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
40 V
Emitter-base voltage (Collector open) V
EBO
15 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 40 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 15 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 20 V, I
B
= 0 1 µA
Forward current transfer ratio * h
FE
V
CE
= 10 V, I
C
= 2 mA 400 2 000

Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.05 0.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 120 MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
h
FE
400 to 800 600 to 1 200 1 000 to 2 000
■ Package
• Code
SMini3-F2
• Marking Symbol: 1Z
• Pin Name
1: Base
2: Emitter
3: Collector