Panasonic MA24D51 - Manual

Schottky Barrier Diodes (SBD)
Publication date: September 2006 SKH00154AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D51
Silicon epitaxial planar type
For rectifi cation
 Features  
 Allowing low-profi le mounting  

Forward current (Average) I  
F(AV)
= 3 A rectifi cation is possible
 Low forward voltage V  
F
Low forward voltage V Low forward voltage V
 Absolute Maximum Ratings   T
a
= 25
aa
° C
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Maximum peak reverse voltage V
RM
V V 40 V
Forward current (Average) *1 I
F(AV)
3.0 A
Non-repetitive peak forward surge current *2 I
FSM
60 A
Junction temperature T
j
TT 150 ° C
Storage temperature T
stg
TT –40 to +150 ° C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics   T
a
= 25
aa
° C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
V V I
F
= 3.0 A 0.37 0.42 V
Reverse current I
R
V
R
= 40 V
R R
2 mA
Thermal resistance (j-a) * R
th(j-a)
R R 60 ° C/W
Thermal resistance (j-l) R
th(j-l)
R R 10 ° C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: Mounted on an alumina PC board
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40 ± 0.10 0.15 ± 0.05
1
2
1.75 ± 0.05
4.70
±0.10
3.80
±0.05
0.450
±0.05
5°
0 to 0.40
0 to 0.0
3 0.90MAX
5°
Marking Symbol: 5S