Panasonic MA2DF31 User Manual

Ma2df31, Silicon mesa type, Fast recovery diodes (frd)

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Fast Recovery Diodes (FRD)

Publication date: December 2008

SKJ00023AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

MA2DF31

Silicon mesa type

For high frequency rectification

Features

Super high speed switching characteristic: t

rr

= 20 ns (typ.)

Low noise type

Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

V

RRM

300

V

Non-repetitive peak reverse surge voltage

V

RSM

300

V

Forward current (Average)

*1

I

F(AV)

5

A

Non-repetitive peak forward surge current

*2

I

FSM

30

A

Junction temperature

T

j

+150

°

C

Storage temperature

T

stg

-40 to +150

°

C

Note) *1: T

C

= 25°C

*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Electrical Characteristics T

a

= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

= 5 A

1.0

1.3

V

Reverse current

I

RRM

V

RRM

= 300 V

20

m

A

Reverse recovery time

*

t

rr

I

F

= 0.5 A, I

R

= 1.0 A

I

rr

= 0.25 A

20

30

ns

Thermal resistance (j-c)

R

th(j-c)

3.0

°

C/W

Thermal resistance (j-a)

R

th(j-a)

63

°

C/W

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of

current from the operating equipment.

3. *: t

rr

measurement circuit

50 Ω

50 Ω

5.5 Ω

D.U.T.

I

F

I

R

0.25 × I

R

t

rr

Package

Code

TO-220D-B1

Pin Name

1: Cathode
2: Anode

Marking Symbol: MA2DF31

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