Panasonic 2SC4626J - Manual

Transistors
1 Publication date: December 2002 SJC00281BED
2SC4626J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
30 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Forward current transfer ratio * h
FE
V
CB
= 10 V, I
E
= −1 mA 70 220 
Transition frequency f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz
150 250 MHz
Noise figure NF V
CB
= 10 V, I
E
= −1 mA, f = 5 MHz
2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz
22 50
Ω
Common-emitter reverse transfer C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 0.9 1.5 pF
capacitance
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank B C No-rank
h
FE
70 to 140 110 to 220 70 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Unit: mm
Marking Symbol: V
0.27 ±0.02
3
1 2
0.12 +0.03
–0.01
0.80
± 0.05
(0.80)
0.85 1.60
± 0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60 +0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).