Panasonic 2SC5609G User Manual
Silicon npn epitaxial planar type, Transistors
Transistors
Publication date : November 2008
SJC00427BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Features
High forward current transfer ratio h
FE
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 mA, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 mA, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
m
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
m
A
Forward current transfer ratio
h
FE1
V
CE
= 10 V, I
C
= 2 mA
180
390
h
FE2
*
V
CE
= 2 V, I
C
= 100 mA
90
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= –2 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3F