Panasonic 2SA1790G User Manual

Silicon pnp epitaxial planar type, Transistors, Absolute maximum ratings t

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Transistors

1

Publication date: May 2007

SJC00379AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1790G

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC4626G

■ Features

• Optimum for RF amplification of FM/AM radios
• High transition frequency f

T

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−30

V

Collector-emitter voltage (Base open)

V

CEO

−20

V

Emitter-base voltage (Collector open)

V

EBO

−5

V

Collector current

I

C

−30

mA

Collector power dissipation

P

C

125

mW

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Rank

B

C

h

FE

70 to 140

110 to 220

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Base-emitter voltage

V

BE

V

CE

= −10 V, I

C

= −1 mA

− 0.7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

= −10 V, I

E

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

= −20 V, I

B

= 0

−100

µA

Emitter-base cutoff current (Collector open)

I

EBO

V

EB

= −5 V, I

C

= 0

−10

µA

Forward current transfer ratio

*

h

FE

V

CE

=

−10 V, I

C

=

−1 mA

70

220

Collector-emitter saturation voltage

V

CE(sat)

I

C

= −10 mA, I

B

= −1 mA

− 0.1

V

Transition frequency

f

T

V

CB

= −10 V, I

E

= 1 mA, f = 200 MHz

150

300

MHz

Noise figure

NF

V

CB

= −10 V, I

E

= 1 mA, f = 5 MHz

2.8

4.0

dB

Reverse transfer impedance

Z

rb

V

CB

= −10 V, I

E

= 1 mA, f = 2 MHz

22

50

Reverse transfer capacitance (Common emitter)

C

re

V

CB

= −10 V, I

E

= 1 mA, f = 10.7 MHz

1.2

2.0

pF

■ Package

• Code

SSMini3-F3

• Marking Symbol: E
• Pin Name

1. Base
2. Emitter
3. Collector

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