Panasonic 2SC3934 - Manual

Transistors
1 Publication date: February 2003 SJC00144BED
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0
100 nA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 2 V, I
C
= 0
1
µA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 10 mA
40

Transition frequency f
T
V
CE
= 10 V, I
C
= 10 mA, f = 0.8 GHz
4.5 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
1.2 pF
(Common base, input open circuited)
Forward transfer gain
S
21e
 2 V
CE
= 10 V, I
C
= 20 mA, f = 0.8 GHz
9 12 dB
Maximum unilateral power gain G
UM
V
CE
= 10 V, I
C
= 20 mA, f = 0.8 GHz
12 14 dB
Noise figure NF V
CE
= 10 V, I
C
= 5 mA, f = 0.8 GHz
1.3 2.5 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
12 V
Emitter-base voltage (Collector open) V
EBO
2.5 V
Collector current I
C
30 mA
Peak collector current I
CP
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 1U
2.1
± 0.1
1.3 ±0.1
0.3 +0.1
–0.0
2.0 ±0.2
1.25
± 0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
± 0.1
0.9
± 0.1
0 to 0.1
0.9
+0.2 –0.1
0.15 +0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).