Panasonic 2SC2634 - Manual

Transistors
1 Publication date: March 2003 SJC00119BED
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■ Features
• Low noise voltage NV
• High forward current transfer ratio h
FE
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
55 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 55 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0
7 V
Base-emitter voltage V
BE
V
CE
= 1 V, I
C
= 30 mA
1 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0
1 100 nA
Collector-emitter cutoffcurrent (Base open) I
CEO
V
CE
= 10 V, I
B
= 0
0.01 1.00
µA
Forward current transfer ratio * h
FE
V
CE
= 5 V, I
C
= 2 mA
180 700

Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.6 V
Transition frequency f
T
V
CB
= 5 V, I
E
= −2 mA, f = 200 MHz 200 MHz
Noise voltage NV V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150 mV
R
g
= 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0 ±0.2
0.7 ±0.1
0.45 +0.15
–0.1
2.5 +0.6
–0.2
0.45 +0.15
–0.1
2.5
1 2 3
+0.6
–0.2
4.0 ±0.2
5.1
± 0.2
12.9
± 0.5
2.3
± 0.2
0.7
± 0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).