Panasonic Light Emitting Diodes LNJ024X4ARA1 User Manual
Hight bright surface mounting chip led, Light emitting diodes, 3528 type absolute maximum ratings t
SHD00740AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
Light Emitting Diodes
LNJ024X4ARA1
Hight Bright Surface Mounting Chip LED
3528 Type
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
P
D
120
mW
Forward current
I
F
30
mA
Pulse forward current
*
I
FP
70
mA
Reverse voltage
V
R
5
V
Operating ambient temperature
T
opr
–40 to +100
°
C
Storage temperature
T
stg
–40 to +100
°
C
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Luminous intensity
*
I
O
I
F
= 20 mA
380
600
940
mcd
Reverse current
I
R
V
R
= 5 V
100
µA
Forward voltage
V
F
I
F
= 20 mA
3.1
3.8
V
Chromaticity coordinates
x
I
F
= 20 mA
0.300
y
I
F
= 20 mA
0.300
Note) *: Measurement tolerance: ±20%
0
5
10
15
20
35
30
25
40
0
−
20
2.0
2.5
3.5
3.0
4.0
−
40
40
20
80
60
100
20
0
40
60
80
100
120
0.1
1
3
5
10
3
1
500
5
10
30
50
100
300
1 000
30
50
100
0.3
0.5
1
3
5
10
I
O
I
F
I
F
V
F
I
F
T
a
1
3
5
10
30 50
100
0
20
20
40
40
60
60
80
80
100
100
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
80°
60°
40°
20°
90°
90°
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Forward current
I
F
(mA)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Luminous intensity
I
O
(mcd)
Relative luminous intensity T
a
Forward current
I
F
(mA)
Relative luminous intensity (%)
Lighting Color
White