Renesas HSG1002 User Manual

Hsg1002, Sigehbt high frequency low noise amplifier, Features

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Rev.1.00, Apr.12.2004, page 1 of 37

HSG1002

SiGeHBT
High Frequency Low Noise Amplifier

REJ03G0196-0100Z

Rev.1.00

Apr.12.2004

Features

High power gain and low noise figure ;

MSG = 21 dB typ. , NF = 0.7 dB typ. at V

CE

= 2 V,I

C

= 5 mA, f = 1.8 GHz

MSG = 20 dB typ. , NF = 0.8 dB typ. at V

CE

= 2 V,I

C

= 5 mA, f = 2.4 GHz

MSG = 16 dB typ. , NF = 1.2 dB typ. at V

CE

= 2 V,I

C

= 10 mA, f = 5.8 GHz

Transition Frequency

f

T

= 38 GHz typ. at f = 1 GHz

V

CEO

= 3.5 V

Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.

Outline

1

2

3

4

1. Emitter
2. Collector
3. Emitter
4. Base

MFPAK-4

VE-

1

2

3

4

Note:

Marking is "VE-".

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

8

V

Collector to emitter voltage

V

CEO

3.5

V

Emitter to base voltage

V

EBO

1.2

V

Collector current

I

C

35

mA

Pc

80

mW

Collector power dissipation

Pc

note1

200

mW

Junction temperature

Tj

150

°

C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )

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