Silicon Power CCS SC 14N40_N-Type Semiconductor Discharge Switch, ThinPak User Manual

Solidtron, N-type semiconductor discharge switch, thinpak

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Description

Single Size - 12 Chip Module

Schematic Symbol

Features

This current controlled Solidtron

TM

(CCS) discharge switch is an n-type

Thyristor in a high performance single chip module. The device gate is
similar to that found on a traditional GTO Thyristor.

The CCS features the high peak current capability and low On-state
voltage drop common to SCR thyristors combined with high di/dt
capability. This semiconductor is intended to be a solid state
replacement for spark or gas type devices commonly used in pulse
power applications.

This single chip package contains a ThinPak

TM

which is a perforated,

metalized ceramic substrate attached to the silicon using 302

o

C

solder. The ThinPak

TM

is attached to a metal baseplate using

60Pb40Sn eutectic solder. It's small size and low profile make it
extremely attractive for high di/dt applications where stray series
inductance must be kept to a minimum.

4000V Peak Off-State Voltage
10 kA Repetitive Ipk Capability

Low On-State Voltage
Low trigger current

Anode (A)

Gate (G)

Solidtron

TM

N-Type Semiconductor Discharge Switch,

ThinPak

TM

Data Sheet (Rev 0 - 07/16/08)

CCSSC14N40A10

275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688

Absolute Maximum Ratings

SYMBOL

VALUE

UNITS

Peak Off-State Voltage

V

DRM

4

kV

Peak Reverse Voltage

V

RRM

-5

V

Off-State Rate of Change of Voltage Immunity*

dv/dt

1

kV/uSec

Continuous Anode Current at Tj = 125

o

C

I

A110

100

A

Repetitive Peak Anode Current (Pulse Width=10uSec)

I

ASM

10.0

kA

Nonrepetitive Peak Anode Current (Pulse Width=10uSec)

I

ASM

14

kA

Rate of Change of Current

dI/dt

30

kA/uSec

Peak Gate Current (1 uS)

IGpk

100

A

Max. Reverse Gate-Cathode Voltage

V

GR

-9

V

Maximum Junction Temperature

T

JM

125

o

C

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890

5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635

5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773

5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957

4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206

5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671

4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668

5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174

4,644,637
4,374,389
4,750,666
4,429,011
5,293,070

10 kA Repetitive Ipk Capability
30 KA/uS di/dt Capability

Low trigger current
Low Inductance Package

Cathode (K)

Preliminary Data Sheet - Product Status : First Production : This data sheet contains preliminary data . Supplementary data will be
published at a later date. Silicon Power reserves the right to make changes at any time without notice.
* Requires a 10 ohm gate to cathode shorting resistor.

CAO 05/28/09

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