Silicon Power HB HVI 5N002_Power Semiconductor Half-Bridge Module User Manual

Hb-hvi-5n002

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HB-HVI-5N002

Power Semiconductor Half-Bridge Module

Package

Schematic Symbol

Size:

W

L

h

2.48 in

4.25 in

1.21 in 203 gms

HB-HVI-5N002

Power Semiconductor Half-Bridge Module

TM

Data Sheet (Rev 0 - 02/06/09)

Application: IUT HV Resonant Stage

Description

This module contains 2 Solidtron (CCS) Size 12
SGTOs and 10 Si Diodes (D2PAK), packaged
for use in a resonant converter or similar
applications. This module provides
connections for AC output and positive and
negative DC bus connections. The module
includes an electrically isolated base-plate.
The module is typically used at 20kHz.

The current controlled Solidtron (CCS) SGTO
is an n-type Thyristor in a high performance
ThinPakTM package. The device gate is similar
to that found on a traditional GTO Thyristor.
The CCS features the high peak current
capability and low On-state voltage drop
common to SCR thyristors combined with
high dI/dt capability.

The ThinPakTM Package is a perforated,

2.48 in

4.25 in

1.21 in 203 gms

Schematic Symbol

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890

5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635

5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773

5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957

4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206

5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671

4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668

5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174

4,644,637
4,374,389
4,750,666
4,429,011
5,293,070

The ThinPakTM Package is a perforated,
metalized ceramic substrate attached to the
silicon using 302oC solder. It's small size and
low profile make it extremely attractive for
high di/dt applications where stray series
inductance must be kept to a minimum.

Application Specific Operating Conditions

For Each Device(SGTO+5 Si Diodes):

• Frequency = 10 kHz
• Voltage (rms) = 2.4 kV
• Voltage (peak) = 3.9kV
• Current (rms) = 14.6 Amps
• Current (peak) = 53.6 Amps

Features

• Low On-State Voltage
• Low trigger current
• Low Inductance Package

1

REV 0

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