3 memory interface signals (ddr) – AMD Geode LX [email protected] User Manual

Page 35

Advertising
background image

AMD Geode™ LX Processors Data Book

35

Signal Definitions

33234H

3.4.3

Memory Interface Signals (DDR)

Signal Name

Ball No.

Type

f

V

Description

SDCLK[5:0]P,
SDCLK[5:0]N

D20, D21,
D23, D24,

J28, H28,

M28, L28,

J4, H4,

M4, L4

O

up to 200 MHz

2.5

SDRAM Clock Differential Pairs. The SDRAM
devices sample all the control, address, and
data based on these clocks. All clocks are dif-
ferential clock outputs.

MVREF

P1

I

Analog

V

MEM

Memory Voltage Reference. This input oper-
ates at half the V

MEM

voltage.

CKE[1:0]

F4, E4

I/O

up to 200 Mb/s

2.5

Clock Enable. For normal operation, CKE is
held high. CKE goes low during Suspend.
CKE0 is used with CS0# and CS1#. CKE1 is
used with CS2# and CS3#.

CS[3:0]#

D30, F29,

F28, B28

I/O

up to 200 Mb/s

2.5

Chip Selects. The chip selects are used to
select the module bank within the system mem-
ory. Each chip select corresponds to a specific
module bank.

If CS# is high, the bank(s) do not respond to
RAS#, CAS#, or WE# until the bank is selected
again.

RAS[1:0]#

D27, C26

I/O

up to 200 Mb/s

2.5

Row Address Strobe. RAS#, CAS#, WE#, and
CKE are encoded to support the different
SDRAM commands. RAS0# is used with CS0#
and CS1#. RAS1# is used with CS2# and
CS3#.

CAS[1:0]#

E29, E28

I/O

up to 200 Mb/s

2.5

Column Address Strobe. RAS#, CAS#, WE#,
and CKE are encoded to support the different
SDRAM commands. CAS0# is used with CS0#
and CS1#. CAS1# is used with CS2# and
CS3#.

WE[1:0]#

A28, C27

I/O

up to 200 Mb/s

2.5

Write Enable. RAS#, CAS#, WE#, and CKE
are encoded to support the different SDRAM
commands. WE0# is used with CS0# and
CS1#. WE1# is used with CS2# and CS3#.

BA[1:0]

C20, D26

I/O

up to 200 Mb/s

2.5

Bank Address Bits. These bits are used to
select the component bank within the SDRAM.

MA[13:0]

See Table

3-6 on

page 30

I/O

up to 200 Mb/s

2.5

Memory Address Bus. The multiplexed row/
column address lines driven to the system
memory.

Supports 256-Mbit SDRAM.

TLA[1:0]

B13, B15

I/O

up to 200 Mb/s

2.5

Memory Debug Pins. These pins provide use-
ful memory interface debug timing signals.
(Should be wired to DIMM slot.)

TLA[0] is wired to DQS[8] on the DIMM
TLA[1] is wired to CB[0] on the DIMM

DQS[7:0]

N31, J29,

B23, C19,

A10, C6,

H3, M2

I/O

up to 200 MHz

2.5

DDR Data Strobe.

Advertising
This manual is related to the following products: