Document Outline

• 4Gb Flex-MuxOneNAND M-die
  • 1.0 INTRODUCTION
    • 1.1 Ordering Information
    • 1.2 General Overview
    • 1.3 Product Features
  • 2.0 DEVICE DESCRIPTION
    • 2.1 Detailed Product Description
    • 2.2 Definitions
    • 2.3 Pin Configuration
      • 2.3.1 4Gb (KFM4GH6Q4M) / 8Gb (KFN8GH6Q4M)
      • 2.3.2 16Gb Product (KFKAGH6Q4M) (TBD)
    • 2.4 Pin Description
    • 2.5 Block Diagram
    • 2.6 Memory Array Organization
      • 2.6.1 Internal (NAND Array) Memory Organization
      • 2.6.2 External (BufferRAM) Memory Organization
    • 2.7 Memory Map
      • 2.7.1 Internal (NAND Array) Memory Organization
      • 2.7.2 Internal Memory Spare Area Assignment
      • 2.7.3 External Memory (BufferRAM) Address Map
      • 2.7.4 External Memory Map Detail Information
      • 2.7.5 External Memory Spare Area Assignment
    • 2.8 Registers
      • 2.8.1 Register Address Map
      • 2.8.2 Manufacturer ID Register F000h (R)
      • 2.8.3 Device ID Register F001h (R)
      • 2.8.4 Version ID Register F002h
      • 2.8.5 Data Buffer Size Register F003h (R)
      • 2.8.6 Boot Buffer Size Register F004h (R)
      • 2.8.7 Amount of Buffers Register F005h (R)
      • 2.8.8 Technology Register F006h (R)
      • 2.8.9 Start Address1 Register F100h (R/W)
      • 2.8.10 Start Address2 Register F101h (R/W)
      • 2.8.11~15 Start Address3~7 Register F102h~F106h
      • 2.8.16 Start Address8 Register F107h (R/W)
      • 2.8.17 Start Buffer Register F200h (R/W)
      • 2.8.18 Command Register F220h (R/W)
        • 2.8.18.1 Two Methods to Clear Interrupt Register in Command Input
      • 2.8.19 System Configuration 1 Register F221h (R, R/W)
      • 2.8.20 System Configuration 2 Register F222h
      • 2.8.21 Controller Status Register F240h (R)
      • 2.8.22 Interrupt Status Register F241h (R/W)
      • 2.8.23 Start Block Address Register F24Ch (R/W)
      • 2.8.24 Start Block Address Register F24Dh (R/W)
      • 2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
      • 2.8.26 ECC Status Register 1 FF00h (R)
      • 2.8.27 ECC Status Register 2 FF01h (R)
      • 2.8.28 ECC Status Register 3 FF02h (R)
      • 2.8.29 ECC Status Register 4 FF03h (R)
  • 3.0 DEVICE OPERATION
    • 3.1 Command Based Operation
      • 3.1.1 Reset Flex-MuxOneNAND Command
      • 3.1.2 Load Data Into Buffer Command
      • 3.1.3 Read Identification Data Command
    • 3.2 Device Bus Operation
    • 3.3 Reset Mode Operation
      • 3.3.1 Cold Reset Mode Operation
      • 3.3.2 Warm Reset Mode Operation
      • 3.3.3 Hot Reset Mode Operation
      • 3.3.4 NAND Flash Core Reset Mode Operation
    • 3.4 Write Protection Operation
      • 3.4.1 BootRAM Write Protection Operation
      • 3.4.2 NAND Flash Array Write Protection Operation
      • 3.4.3 NAND Array Write Protection States
        • 3.4.3.1 Unlocked NAND Array Write Protection State
        • 3.4.3.2 Locked NAND Array Write Protection State
        • 3.4.3.3 Locked-tight NAND Array Write Protection State
      • 3.4.4 NAND Flash Array Write Protection State Diagram
    • 3.5 Data Protection During Power Down Operation
    • 3.6 Load Operation
      • 3.6.1 Superload Operation
      • 3.6.2 LSB Page Recovery Read
    • 3.7 Read Operation
      • 3.7.1 Asynchronous Read Mode Operation (RM=0, WM=0)
      • 3.7.2 Synchronous Read Mode Operation (RM=1, WM=X)
        • 3.7.2.1 Continuous Linear Burst Read Operation
        • 3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation
        • 3.7.2.3 Programmable Burst Read Latency Operation
      • 3.7.3 Handshaking Operation
      • 3.7.4 Output Disable Mode Operation
    • 3.8 Synchronous Write(RM=1, WM=1)
    • 3.9 Program Operation
      • 3.9.1 Cache Program Operation
      • 3.9.2 Interleave Cache Program Operation
    • 3.10 Copy-Back Program Operation with Random Data Input
    • 3.11 Erase Operation
      • 3.11.1 Block Erase Operation
      • 3.11.2 Erase Suspend / Erase Resume Operation
    • 3.12 Partition Information (PI) Block (SLC Only)
      • 3.12.1 PI Block Boundary Information setting
        • 3.12.1.1 PI Block Access mode entry
        • 3.12.1.2 PI Block Erase
        • 3.12.1.3 PI Block Program Operation
        • 3.12.1.4 PI Update
      • 3.12.2 PI Block Load Operation
    • 3.13 OTP Operation (SLC only)
      • 3.13.1 OTP Block Load Operation
      • 3.13.2 OTP Block Program Operation
      • 3.13.3 OTP Block Lock Operation
      • 3.13.4 1st Block OTP Lock Operation
      • 3.13.5 OTP and 1st Block OTP Lock Operation
    • 3.14 DQ6 Toggle Bit
    • 3.15 ECC Operation
      • 3.15.1 ECC Bypass Operation
    • 3.16 Invalid Block Operation
      • 3.16.1 Invalid Block Identification Table Operation
      • 3.16.2 Invalid Block Replacement Operation
  • 4.0 DC CHARACTERISTICS
    • 4.1 Absolute Maximum Ratings
    • 4.2 Operating Conditions
    • 4.3 DC Characteristics
  • 5.0 AC CHARACTERISTICS
    • 5.1 AC Test Conditions
    • 5.2 Device Capacitance
    • 5.3 Valid Block Characteristics
    • 5.4 AC Characteristics for Synchronous Burst Read
    • 5.5 AC Characteristics for Asynchronous Read
    • 5.6 AC Characteristics for Warm Reset (RP), Hot Reset and NAND Flash Core Reset
    • 5.7 AC Characteristics for Asynchronous Write
    • 5.8 AC Characteristics for Burst Write Operation
    • 5.9 AC Characteristics for Load/Program/Erase Performance
    • 5.10 AC Characteristics for INT Auto Mode
  • 6.0 TIMING DIAGRAMS
    • 6.1 8-Word Linear Burst Read Mode with Wrap Around
    • 6.2 Continuous Linear Burst Read Mode with Wrap Around
    • 6.3 Asynchronous Read (VA Transition Before AVD Low)
    • 6.4 Asynchronous Read (VA Transition After AVD Low)
    • 6.5 Asynchronous Write
    • 6.6 8-Word Linear Burst Write Mode
    • 6.7 Burst Write Operation followed by Burst Read
    • 6.8 Start Initial Burst Write Operation
    • 6.9 Load Operation Timing
    • 6.10 Superload Operation Timing
    • 6.11 Program Operation Timing
    • 6.12 Cache Program Operation Timing
    • 6.13 Interleave Cache Program Operation Timing
    • 6.14 Block Erase Operation Timing
    • 6.15 Cold Reset Timing
    • 6.16 Warm Reset Timing
    • 6.17 Hot Reset Timing
    • 6.18 NAND Flash Core Reset Timing
    • 6.19 Data Protection Timing During Power Down
    • 6.20 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low)
    • 6.21 Toggle Bit Timing in Asynchronous Read (VA Transition After AVD Low)
    • 6.22 INT auto mode
  • 7.0 TECHNICAL AND APPLICATION NOTES
    • 7.1 Methods of Determining Interrupt Status
      • 7.1.1 The INT Pin to a Host General Purpose I/O
      • 7.1.2 Polling the Interrupt Register Status Bit
      • 7.1.3 Determining Rp Value (DDP, QDP Only)
    • 7.2 Boot Sequence
      • 7.2.1 Boot Loaders in Flex-MuxOneNAND
      • 7.2.2 Boot Sequence
    • 7.3 Partition of Flex-MuxOneNAND
    • 7.4 DDP and QDP Description
  • 8.0 PACKAGE DIMENSIONS (TBD)