Panasonic 2SB1220G - Manual

Transistors
1 Publication date: April 2007 SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−150 V
Collector-emitter voltage (Base open) V
CEO
−150 V
Emitter-base voltage (Collector open) V
EBO
−5 V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −150 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −1 µA
Forward current transfer ratio * h
FE
V
CE
= −5 V, I
C
= −10 mA
130 450

Collector-emitter saturation voltage V
CE(sat)
I
C
= −30 mA, I
B
= −3 mA −1 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz
200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
4 pF
(Common base, input open circuited)
Noixe voltage NV V
CE
= −10 V, I
C
= −1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
Rank R S T
h
FE
130 to
220
185 to
330
260 to
450
■ Package
• Code
SMini3-F2
• Marking Symbol: I
• Pin Name
1. Base
2. Emitter
3. Collector