Panasonic 2SD1821A - Manual

Transistors
Publication date : October 2008 SJC00425AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
 Features
 High collector-emitter voltage (Base open) V
CEO
 Low noise voltage NV
 S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
185 V
Collector-emitter voltage (Base open) V
CEO
185 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 ° C
Storage temperature T
stg
–55 to +150 ° C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 mA, I
B
= 0 185 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 100 V, I
E
= 0 1 m A
Forward current transfer ratio * h
FE
V
CE
= 5 V, I
C
= 10 mA 130 330 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA 1 V
Transition frequency f
T
V
CB
= 10 V, I
E
= –10 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 2.3 pF
Noise voltage NV
V
CB
= 10 V, I
C
= 1 mA, G
V
= 80 dB,
R
g
= 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
h
FE
130 to 220 185 to 330
 Package
 Code
SMini3-G1

Pin Name
1. Base
2. Emitter
3. Collector
 Marking Symbol: L