Panasonic Fast Recovery Diodes MA3DF40 - Manual

Fast Recovery Diodes (FRD)
Publication date: October 2007 SKJ00021AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA3DF40
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
 Features
 High switching speed t
rr
 Soft recovery
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
370 V
Non-repetitive peak reverse surge voltage V
RSM
430 V
Forward current T
C
= 25°C I
F
20 A
Non-repetitive peak forward surge current * I
FSM
100 A
Junction temperature T
j
–40 to +150 ° C
Storage temperature T
stg
–40 to +150 ° C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 20 mA 1.2 1.4 V
Reverse current I
RRM
V
RRM
= 370 V 10 m A
Reverse recovery time * t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
20 35 ns
Thermal resistance (j-a) R
th(j-c)
3.0 ° C/W
Thermal resistance (j-c) R
th(j-a)
63 ° C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
D.U.T
t
rr
0.25 × I
R
I
F
I
R
50 Ω
5.5 Ω
50 Ω
 Package
 Code
TO-220D-A1

Pin Name
1: Anode
2: Cathode
3: Anode
 Marking Symbol: MA3DF40
 Intemal Connection
1 3 2