Panasonic 2SC6050 User Manual

Silicon npn epitaxial planar type, Transistors

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Transistors

Publication date: May 2005

SJC00335AED

1

2SC6050

Silicon NPN epitaxial planar type

For high frequency amplifi cation, oscillation and mixing

Features

High transition frequency f

T

High transition frequency f

High transition frequency f

Small collector output capacitance (Common base, input open circuited) C

ob

and reverse transfer capacitance (Common base) C

rb

Optimum for high-density mounting and downsizing of the equipment for

Ultraminiature leadless package

0.6 mm × 1.0 mm (height 0.39 mm)

Absolute Maximum Ratings

T

a

= 25

aa

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

15

V

Collector-emitter voltage (Base open)

V

CEO

10

V

Emitter-base voltage (Collector open)

V

EBO

3

V

Collector current

I

C

50

mA

Collector power dissipation

P

C

100

mW

Junction temperature

T

j

TT

125

°

C

Storage temperature

T

stg

TT

55 to +125

°

C

Electrical Characteristics

T

a

= 25

aa

°

C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

CEO

I

C

= 2 mA, I

B

= 0

10

V

Emitter-base voltage (Collector open)

V

EBO

I

E

= 10

EE

µ

A, I

C

= 0

3

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

= 10 V, I

E

= 0

EE

1

µ

A

Forward current transfer ratio

h

FE

hh

V

CE

= 4 V, I

CE

CE

C

= 5 mA

75

400

Collector-emitter saturation voltage

V

CE(sat)

I

C

= 20 mA, I

B

= 4 mA

0.5

V

Transition frequency

f

T

ff

V

CB

= 4 V, I

E

=

EE

5 mA, f = 200 MHz

1.4

1.9

2.7

GHz

Collector output capacitance
(Common base, input open circuited)

C

ob

V

CB

= 4 V, I

E

= 0, f = 1 MHz

EE

1.4

pF

Reverse transfer capacitance (Common base)

C

rb

V

CB

= 4 V, I

E

= 0, f = 1 MHz

EE

0.45

pF

Collector-base parameter

r

bb'

rr  c



c

V

CB

= 4 V, I

E

=

EE

5 mA, f = 31.9 MHz

11

ps

h

FE

hh ratio

FE

FE

h

∆∆

FE

hh

V

CE

= 4 V, I

CE

CE

C

= 100 µA / V

CE

= 4 V, I

CE

CE

C

=

C

C

5 mA

0.75

1.6

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Unit: mm

1: Base

2: Emitter

3: Collector

ML3-N2 Package

0.60

±0.05

1.00

±0.05

2

1

3

0.39

+0.01

0.03

0.25

±0.05

0.25

±0.05

0.50

±0.05

0.65

±0.01

0.15

±0.05

2

1

0.35

±0.01

0.05

±0.03

0.05

±0.03

3

Marking Symbol: 6N

This product complies with the RoHS Directive (EU 2002/95/EC).

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