NXP Semiconductors PBLS4004D - Manual (Page 7)

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 7 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
[1] Pulse test: t
p
≤
300
µ
s;
δ ≤
0.02.
f
T
transition frequency I
C
=
−
50 mA; V
CE
=
−
10 V;
f = 100 MHz
150 - - MHz
C
c
collector capacitance V
CB
=
−
10 V; I
E
= i
e
= 0 A;
f = 1 MHz
- - 12 pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current V
CB
= 50 V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current V
CE
= 30 V; I
B
= 0 A - - 1
µ
A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°
C
- - 50
µ
A
I
EBO
emitter-base cut-off
current V
EB
= 5 V; I
C
= 0 A - - 180
µ
A
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA 60 - -
V
CEsat
collector-emitter
saturation voltage I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100
µ
A - 1.1 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 k
Ω
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
- - 2.5 pF
Table 7. Characteristics …continued
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit