Omron Photomicrosensor (Transmissive) EE-SX1107 User Manual

Photomicrosensor (transmissive), Ee-sx1107, Dimensions

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Photomicrosensor (Transmissive)

EE-SX1107

1

Photomicrosensor (Transmissive)

EE-SX1107

Dimensions

Note: All units are in millimeters unless otherwise indicated.

Features

Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
PCB surface mounting type.
High resolution with a 0.15-mm-wide aperture.
RoHS Compliant.

Absolute Maximum Ratings (Ta = 25° C)

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25

° C.

2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering

and within 3 seconds for manual soldering.

Ordering Information

Electrical and Optical Characteristics (Ta = 25° C)

Internal Circuit

Terminal No. Name

A

Anode

K

Cathode

C

Collector

E Emitter

Recommended Soldering
Pattern

Optical
axis

Cross section AA

Unless otherwise specified, the
tolerances are

±0.15 mm.

Item

Symbol

Rated value

Emitter

Forward current

I

F

25 mA (see note 1)

Pulse forward current I

FP

100 mA (see note 2)

Reverse voltage

V

R

5 V

Detector

Collector–Emitter
voltage

V

CEO

20 V

Emitter–Collector
voltage

V

ECO

5 V

Collector current

I

C

20 mA

Collector dissipation

P

C

75 mW (see note 1)

Ambient
temperature

Operating

Topr

–30

° C to 85° C

Storage

Tstg

–40

° C to 90° C

Reflow soldering

Tsol

240

° C (see note 3)

Manual soldering

Tsol

300

° C (see note 3)

Description

Model

Photomicrosensor (transmissive)

EE-SX1107

Item

Symbol

Value

Condition

Emitter

Forward voltage

V

F

1.1 V typ., 1.3 V max.

I

F

= 5 mA

Reverse current

I

R

10

µA max.

V

R

= 5 V

Peak emission wavelength

λ

P

940 nm typ.

I

F

= 20 mA

Detector

Light current

I

L

50

µA min., 150 µA typ.,

500

µA max.

I

F

= 5 mA, V

CE

= 5 V

Dark current

I

D

100 nA max.

V

CE

= 10 V, 0 lx

Leakage current

I

LEAK

---

---

Collector–Emitter saturated voltage

V

CE

(sat)

0.1 V typ., 0.4 V max.

I

F

= 20 mA, I

L

= 50

µA

Peak spectral sensitivity wavelength

λ

P

900 nm typ.

---

Rising time

tr

10

µs typ.

V

CC

= 5 V, R

L

= 1 k

Ω,

I

L

= 100

µA

Falling time

tf

10

µs typ.

V

CC

= 5 V, R

L

= 1 k

Ω,

I

L

= 100

µA

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