St303clpbf series, Vishay high power products, Switching – C&H Technology ST303CLPbF Series User Manual

Page 4: Blocking, Triggering, Thermal and mechanical specifications

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Document Number: 94374

For technical questions, contact: [email protected]

www.vishay.com

Revision: 30-Apr-08

3

ST303CLPbF Series

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

Vishay High Power Products

Note

(1)

t

q

= 10 to 20 µs for 400 to 800 V devices; t

q

= 15 to 30 µs for 1000 to 1200 V devices

SWITCHING

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum non-repetitive rate of
rise of turned on current

dI/dt

T

J

= T

J

maximum, V

DRM

= rated V

DRM

I

TM

= 2 x dI/dt

1000

A/µs

Typical delay time

t

d

T

J

= 25 °C, V

DM

= Rated V

DRM

, I

TM

= 50 A DC, t

p

= 1 µs

Resistive load, gate pulse: 10 V, 5

Ω source

0.83

µs

Maximum turn-off time

(1)

minimum

t

q

T

J

= T

J

maximum,

I

TM

= 550 A, commutating dI/dt = 40 A/µs

V

R

= 50 V, t

p

= 500 µs, dV/dt: See table in device code

10

maximum

30

BLOCKING

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of off-state voltage

dV/dt

T

J

= T

J

maximum, linear to 80 % V

DRM

,

higher value available on request

500

V/µs

Maximum peak reverse and off-state leakage current

I

RRM

,

I

DRM

T

J

= T

J

maximum, rated V

DRM

/V

RRM

applied

50

mA

TRIGGERING

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum peak gate power

P

GM

T

J

= T

J

maximum, f = 50 Hz, d% = 50

60

W

Maximum average gate power

P

G(AV)

10

Maximum peak positive gate current

I

GM

T

J

= T

J

maximum, t

p

≤ 5 ms

10

A

Maximum peak positive gate voltage

+ V

GM

20

V

Maximum peak negative gate voltage

- V

GM

5

Maximum DC gate currrent required to trigger

I

GT

T

J

= 25 °C, V

A

= 12 V, R

a

= 6

Ω

200

mA

Maximum DC gate voltage required to trigger

V

GT

3

V

Maximum DC gate current not to trigger

I

GD

T

J

= T

J

maximum, rated V

DRM

applied

20

mA

Maximum DC gate voltage not to trigger

V

GD

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum operating junction temperature range

T

J

- 40 to 125

°C

Maximum storage temperature range

T

Stg

- 40 to 150

Maximum thermal resistance, junction to heatsink

R

thJ-hs

DC operation single side cooled

0.11

K/W

DC operation double side cooled

0.05

Maximum thermal resistance, case to heatsink

R

thC-hs

DC operation single side cooled

0.011

DC operation double side cooled

0.005

Mounting force, ± 10 %

9800

(1000)

N

(kg)

Approximate weight

250

g

Case style

See dimensions - link at the end of datasheet

TO-200AC (B-PUK)

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