Vishay semiconductors – C&H Technology VS-UFL130FA60 User Manual
Page 5
VS-UFL130FA60
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Vishay Semiconductors
Revision: 26-Oct-11
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Document Number: 93658
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical I
rr
Diode vs. dI
F
/dt
Note
(2)
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
A
llo
w
a
b
le
C
a
s
e
T
e
m
p
er
at
u
re (
°
C)
I
F
- Continuous Forward Current (A)
DC
Square wave (D = 0.50)
Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
0
20
40
60
80
100
120
140
160
180
200
220
240
0
20
40
60
80
100
120
140
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
DC
t
rr
(ns)
dI
F
/dt (A/µs)
100
1000
V
R
= 200 V
50
100
150
200
250
I
F
= 50 A, 125 °C
I
F
= 50 A, 25 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100
1000
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C
V
R
= 200 V
0
500
1000
1500
2000
2500
3000
I
rr
(A)
dI
F
/dt (A/μs)
V
R
= 200 V
1000
100
0
5
10
15
20
25
30
35
I
F
= 50 A, 25 °C
I
F
= 50 A, 125 °C