C&H Technology VS-GB75TP120N - Manual (Page 5)

VS-GB75TP120N
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Vishay Semiconductors
Revision: 17-Sep-12 4 Document Number: 94712
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
C
0
20
40
60
80
100
120
140
160
0 250 500 750 1000 1250 1500
V
CE
(V)
I C
(A)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 10 Ω
I
C
, Module
Z thJC
(K/W)
t (s)
10 0
10 -1
10 -2
10 -3 10 -2 10 -1 10 0 10 1
IGBT
0
25
50
75
100
125
150
0 0.5 1 1.5 2 2.5 3
V
F
(V)
I F
(A)
25 °C
125 °C
I
F
(A)
E (mJ)
0
1
2
3
4
5
6
0 25 50 75 100 125 150
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 10 Ω
V
CC
= 600 V
E
rec