Vishay semiconductors – C&H Technology GB05XP120KTPbF User Manual
Page 2
Document Number: 93912
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 03-Aug-10
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Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 5 A
GB05XP120KTPbF
Vishay Semiconductors
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED
®
diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V
2.90 V
I
C
at T
C
= 100 °C
5 A
t
sc
at T
J
= 150 °C
> 10 μs
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
12
A
T
C
= 100 °C
5
Pulsed collector current
I
CM
24
Peak switching current
I
LM
24
Diode continuous forward current
I
F
T
C
= 100 °C
5
Peak diode forward current
I
FM
12
Gate to emitter voltage
V
GE
± 20
V
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
Maximum power dissipation
(including diode and IGBT)
P
D
T
C
= 25 °C
76
W
T
C
= 100 °C
31