C&H Technology VS-GA300TD60S - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 93362
2 Revision: 31-May-11
This document is subject to change without notice.
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GA300TD60S
Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 300 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 500 μA 600 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 150 A - 1.04 1.15
V
GE
= 15 V, I
C
= 300 A - 1.24 1.45
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C - 0.96 1.06
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C - 1.22 1.42
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 2.9 4.8 6.3
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.02 0.75
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 1.5 10
Diode forward voltage drop V
FM
I
FM
= 150 A - 1.23 1.39
V
I
FM
= 300 A - 1.48 1.75
I
FM
= 150 A, T
J
= 125 °C - 1.17 1.33
I
FM
= 300 A, T
J
= 125 °C - 1.50 1.77
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
on
I
C
= 300 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 1.5
, L = 500 μH, T
J
= 25 °C
- 9 -
mJ
Turn-off switching loss E
off
- 90 -
Total switching loss E
tot
- 99 -
Turn-on switching loss E
on
I
C
= 300 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 1.5 , L = 500 μH, T
J
= 125 °C
- 23 -
Turn-off switching loss E
off
- 133 -
Total switching loss E
tot
- 156 -
Turn-on delay time t
d(on)
- 442 -
ns
Rise time t
r
- 301 -
Turn-off delay time t
d(off)
- 406 -
Fall time t
f
- 1570 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 800 A, V
CC
= 400 V
V
P
= 600 V, R
g
= 22
V
GE
= 15 V to 0 V,
L = 500 μH
Fullsquare
Diode reverse recovery time t
rr
I
F
= 300 A, dI
F
/dt = 500 A/μs,
V
CC
= 400 V, T
J
= 25 °C
- 150 179 ns
Diode peak reverse current I
rr
- 43 59 A
Diode recovery charge Q
rr
- 3.9 6.3 μC
Diode reverse recovery time t
rr
I
F
= 300 A, dI
F
/dt = 500 A/μs,
V
CC
= 400 V, T
J
= 125 °C
- 236 265 ns
Diode peak reverse current I
rr
- 64 80 A
Diode recovery charge Q
rr
- 8.6 11.1 μC