C&H Technology CPV364M4KPbF - Manual (Page 8)

Document Number: 94488 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 7
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
Fig. 17 - Typical dI
(rec)M
/dt vs dI
F
/dt
20
40
60
80
100
0 0 0 1 0 0 1
f di /dt - (A/µs)
t - (n
s
)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0 0 0 1 0 0 1
f di /dt - (A/µs)
I
- (A)
IR
R
M
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
0 0 0 1 0 0 1
f
di /dt - (A/µs)
RR
Q
-
(n
C
)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
0 0 0 1 0 0 1
f di /dt - (A/µs)
di(rec)M
/d
t - (A/µ
s
)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J