C&H Technology CM900DUC-24NF - Manual (Page 4)

CM900DUC-24NF
Mega Power Dual IGBTMOD™
900 Amperes/1200 Volts
3 01/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 90mA, V
CE
= 10V 6 7 8 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 1.0 µA
Collector-Emitter Saturation Voltage (Chip) V
CE(sat)
I
C
= 900A, V
GE
= 15V, T
j
= 25°C *6 – 1.8 2.5 Volts
(Without Lead Resistance) I
C
= 900A, V
GE
= 15V, T
j
= 125°C *6 – 2.0 – Volts
Module Lead Resistance R
(lead)
I
C
= 900A, Terminal-Chip – 0.286 – mΩ
Input Capacitance C
ies
– – 140 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 16 nF
Reverse Transfer Capacitance C
res
– – 3 nF
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 900A, V
GE
= 15V – 4800 – nC
Inductive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 900A, – – 600 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 200 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 0.35Ω, Inductive Load – – 800 ns
Times Fall Time t
f
Switching Operation – – 300 ns
Reverse Recovery Time t
rr
*3 I
E
= 900A – – 500 ns
Reverse Recovery Charge Q
rr
*3 – 50 – µC
Emitter-Collector Voltage (Chip) V
EC
*3 I
E
= 900A, V
GE
= 0V *6 – – 3.2 Volts
(Without Lead resistance)
External Gate Resistance R
G
0.35 – 2.2 Ω
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case *1 R
th(j-c)
Q Per IGBT (1/2 Module) – – 0.021 °C/W
Thermal Resistance, Junction to Case *1 R
th(j-c)
D Per Clamp Diode (1/2 Module) – – 0.034 °C/W
Contact Thermal Resistance *1 R
th(c-f)
Thermal Grease Applied (1/2 Module) – 0.012 – °C/W
*1 Case temperatureT
C
and heatsink temperature (T
f
) measured point is just under the chips.
*3 I
E
, I
EM
, V
EC
, I
FSM
, I 2 t, t
rr
, Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible teperature rise.