Vishay semiconductors, Circuit configuration – C&H Technology VS-GB100NH120N User Manual
Page 6
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VS-GB100NH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
5
Document Number: 94755
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E
(mJ)
R
g
(
Ω)
0
10
20
30
40
50
60
8
7
6
5
4
3
2
1
0
E
rec
V
CC
= 600 V
I
C
= 100 A
V
GE
= - 15 V
T
J
= 125 °C
0.001
0.01
0.1
0.001
0.01
0.1
1
10
t (s)
Z
thJC
(K/W)
Diode
1
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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