C&H Technology GB100TS60NPbF - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94501
2 Revision: 07-May-08
GB100TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
108 A
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 500 µA 600 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A - 1.95 2.1
V
GE
= 15 V, I
C
= 100 A - 2.6 2.85
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.21 2.44
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 3.05 3.38
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 µA 3 4.6 6
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.01 0.1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - 3.7 10
Diode forward voltage drop V
FM
I
C
= 50 A - 1.35 1.66
V
I
C
= 100 A - 1.57 1.96
I
C
= 50 A, T
J
= 125 °C - 1.27 1.50
I
C
= 100 A, T
J
= 125 °C - 1.57 1.89
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V,
R
G
= 4.7
Ω, L = 200 µH
- 0.6 -
mJ
Turn-off switching loss E
off
- 1.1 -
Total switching loss E
tot
- 1.7 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V,
R
G
= 4.7
Ω, L = 200 µH, T
J
= 125 °C
- 0.8 -
Turn-off switching loss E
off
- 1.3 -
Total switching loss E
tot
- 2.1 -
Turn-on delay time t
d(on)
- 197 -
ns
Rise time t
r
- 50 -
Turn-off delay time t
d(off)
- 225 -
Fall time t
f
- 72 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 200 A,
R
G
= 27
Ω, V
GE
= 15 V to 0
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C, V
CC
= 400 V, V
P
= 600 V,
R
G
= 27
Ω, V
GE
= 15 V to 0
10 - -
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/µs,
V
CC
= 400 V, T
J
= 25 °C
- 116 140 ns
Diode peak reverse current I
rr
- 11 15 A
Diode recovery charge Q
rr
- 600 1050 nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/µs,
V
CC
= 400 V, T
J
= 125 °C
- 152 190 ns
Diode peak reverse current I
rr
- 16 20 A
Diode recovery charge Q
rr
- 1215 1900 nC