C&H Technology VSK.26..PbF Series - Manual (Page 4)

Document Number: 94418 For technical questions, contact: [email protected] www.vishay.com
Revision: 22-Apr-08 3
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK TM Generation 5 Power Modules), 27 A
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
270
mA T
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied 0.25 V
Maximum gate current that will not trigger I
GD
T
J
= 125 °C, rated V
DRM
applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM
,
I
DRM
T
J
= 125 °C, gate open circuit 15 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of off-state voltage dV/dt (1) T
J
= 125 °C, linear to 0.67 V
DRM
500 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum internal thermal resistance,
junction to case per module
R
thJC
DC operation 0.31
K/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread
of the compound.
5
Nm
busbar 3
Approximate weight
110 g
4 oz.
Case style JEDEC TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W