Datasheet, Igbt sip module (fast igbt) cpv364m4fpbf, Vishay high power products – C&H Technology CPV364M4FPbF User Manual

Page 2: Rohs

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Document Number: 94487

For technical questions, contact: [email protected]

www.vishay.com

Revision: 01-Sep-08

1

IGBT SIP Module

(Fast IGBT)

CPV364M4FPbF

Vishay High Power Products

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

®

soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz

See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay‘s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

Notes

(1)

Repetitive rating; V

GE

= 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

V

CC

= 80 % (V

CES

), V

GE

= 20 V, L = 10 µH, R

G

= 10

Ω (see fig. 19)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

I

RMS

per phase (4.6 kW total)

with T

C

= 90 °C

18 A

RMS

T

J

125 °C

Supply voltage

360 Vdc

Power factor

0.8

Modulation depth (see fig. 1)

115 %

V

CE(on)

(typical)

at I

C

= 15 A, 25 °C

1.35 V

IMS-2

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

MAX.

UNITS

Collector to emitter voltage

V

CES

600

V

Continuous collector current, each IGBT

I

C

T

C

= 25 °C

27

A

T

C

= 100 °C

15

Pulsed collector current

I

CM

(1)

80

Clamped inductive load current

I

LM

(2)

80

Diode continuous forward current

I

F

T

C

= 100 °C

9.3

Diode maximum forward current

I

FM

80

Gate to emitter voltage

V

GE

± 20

V

Isolation voltage

V

ISOL

Any terminal to case, t = 1 minute

2500

V

RMS

Maximum power dissipation, each IGBT

P

D

T

C

= 25 °C

63

W

T

C

= 100 °C

25

Operating junction and storage
temperature range

T

J

, T

Stg

- 40 to + 150

°C

Soldering temperature

For 10 s, (0.063" (1.6 mm) from case)

300

Mounting torque

6-32 or M3 screw

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

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