Vsku/v105..pbf series, Vishay high power products, Thyristor/thyristor, 105 a (add-a-pak – C&H Technology VSKU-V105..PbF Series User Manual

Page 3: Generation 5 power modules), Electrical specifications, Voltage ratings, On-state conduction

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Document Number: 94423

2

Revision: 24-Apr-08

VSKU/V105..PbF Series

Vishay High Power Products

Thyristor/Thyristor, 105 A

(ADD-A-PAK

TM

Generation 5 Power Modules)

ELECTRICAL SPECIFICATIONS

Notes

(1)

I

2

t for time t

x

= I

2

√t x √t

x

(2)

Average power = V

T(TO)

x I

T(AV)

+ r

t

x (I

T(RMS)

)

2

(3)

16.7 % x

π x I

AV

< I <

π x I

AV

(4)

I >

π x I

AV

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

V

RRM

, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

V

V

RSM

, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

V

DRM

, MAXIMUM REPETITIVE

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

I

RRM

,

I

DRM

AT 130 °C

mA

VSKU/V105

04

400

500

400

20

08

800

900

800

12

1200

1300

1200

16

1600

1700

1600

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

I

T(AV)

180° conduction, half sine wave,
T

C

= 85 °C

105

A

Maximum continuous RMS on-state current

I

T(RMS)

DC

165

T

C

77

°C

Maximum peak, one-cycle
non-repetitive on-state current

I

TSM

t = 10 ms

No voltage
reapplied

Sinusoidal
half wave,
initial T

J

= T

J

maximum

1785

A

t = 8.3 ms

1870

t = 10 ms

100 % V

RRM

reapplied

1500

t = 8.3 ms

1570

t = 10 ms

T

J

= 25 °C

no voltage reapplied

2000

t = 8.3 ms

2100

Maximum I

2

t for fusing

I

2

t

t = 10 ms

No voltage
reapplied

Initial T

J

= T

J

maximum

15.91

kA

2

s

t = 8.3 ms

14.52

t = 10 ms

100 % V

RRM

reapplied

11.25

t = 8.3 ms

10.27

t = 10 ms

T

J

= 25 °C

no voltage reapplied

20.00

t = 8.3 ms

18.30

Maximum I

2

√t for fusing

I

2

√t

(1)

t = 0.1 to 10 ms, no voltage reapplied
T

J

= T

J

maximum

159.1

kA

2

√s

Maximum value or threshold voltage

V

T(TO)

(2)

Low level

(3)

T

J

= T

J

maximum

0.80

V

High level

(4)

0.85

Maximum value of on-state
slope resistance

r

t

(2)

Low level

(3)

T

J

= T

J

maximum

2.37

m

Ω

High level

(4)

2.25

Maximum peak on-state or forward voltage

V

TM

I

TM

=

π x I

T(AV)

T

J

= 25 °C

1.64

V

V

FM

I

FM

=

π x I

F(AV)

Maximum non-repetitive rate of
rise of turned on current

dI/dt

T

J

= 25 °C, from 0.67 V

DRM

,

I

TM

=

π x I

T(AV)

, I

g

= 500 mA, t

r

< 0.5 µs, t

p

> 6 µs

150

A/µs

Maximum holding current

I

H

T

J

= 25 °C, anode supply = 6 V,

resistive load, gate open circuit

200

mA

Maximum latching current

I

L

T

J

= 25 °C, anode supply = 6 V, resistive load

400

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