C&H Technology SD803C..C Series - Manual (Page 6)

www.vishay.com For technical questions, contact: [email protected] Document Number: 93180
6 Revision: 04-Aug-08
SD803C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 845 A
Fig. 13 - Recovery Current Characteristics
Fig. 14 - Recovery Time Characteristics
Fig. 15 - Recovery Charge Characteristics
Fig. 16 - Recovery Current Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
-
Ir
r
(A
)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
I = 1000 A
Square Pulse
FM
500 A
250 A
SD803C..S10C Series
T = 125 °C; V = 30V
r J
2
2.5
3
3.5
4
0 0 1 0 1
Ra te Of Fall Of Forward Current - d i/d t (A/ µs)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
- T
rr
(µ
s)
I = 1000 A
Sq ua re Pulse
FM
500 A
250 A
SD803C..S15C Series
T = 125 °C; V = 30V
J r
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
M
a
x
imu
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
I = 1000 A
Sq ua re Pulse
FM
500 A
250 A
SD803C..S15C Series
T = 125 °C; V = 30V
r J
20
30
40
50
60
70
80
90
100
110
120
130
140
10 20 30 40 50 60 70 80 90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
- I
rr
(A
)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
I = 1000 A
Square Pulse
FM
500 A
250 A
SD803C..S15C Series
T = 125 °C; V = 30V
r J
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
P
e
a
k F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
4
d v/ d t = 1000V/ µs
Sinusoidal Pulse
20 joules p er p ulse
10
0.4
0.2
0.04
T = 125°C, V = 800V J RRM
0.02
0.01
SD803C..S10C Series
tp
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
4
20 joules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
Trapezoidal Pulse
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
SD803C..S10C Series
J RRM
tp