C&H Technology CM800DU-12H - Manual (Page 3)

2
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM800DU-12H Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
600 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current (T
c
= 25°C) I
C
800 Amperes
Peak Collector Current I
CM
1600* Amperes
Emitter Current** (T
c
= 25°C) I
E
800 Amperes
Peak Emitter Current** I
EM
1600* Amperes
Maximum Collector Dissipation (T
c
= 25°C, T
j
≤ 150°C) P
c
1500 Watts
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 2 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 80mA, V
CE
= 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 800A, V
GE
= 15V, T
j
= 25°C – 2.5 3.15 Volts
I
C
= 800A, V
GE
= 15V, T
j
= 125°C – 2.75 – Volts
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 800A, V
GE
= 15V – 1600 – nC
Emitter-Collector Voltage** V
EC
I
E
= 800A, V
GE
= 0V – – 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 70.4 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 38.4 nf
Reverse Transfer Capacitance C
res
– – 10.4 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 300V, I
C
= 800A, – – 400 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 2000 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 3.1Ω, Resistive – – 500 ns
Times Fall Time t
f
Load Switching Operation – – 300 ns
Diode Reverse Recovery Time** t
rr
I
E
= 800A, di
E
/dt = -1600A/μs – – 160 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 800A, di
E
/dt = -1600A/μs – 1.92 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/2 Module – – 0.083 °C/W
Thermal Resistance, Junction to Case R
th(j-c)
R Per FWDi 1/2 Module – – 0.13 °C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.010 – °C/W
2