Vishay semiconductors – C&H Technology T85HFL Series User Manual

Page 13

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Document Number: 93184

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Revision: 19-May-10

T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

Fig. 43 - Frequency Characteristics

Fig. 44 - Frequency Characteristics

Fig. 45 - Maximum Forward Energy Power Loss Characteristics

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 Hz

400

1000

200

1500

2500

10000

20000

5000

Pulse Basewidth (µs)

P

e

a

k

F

o

rw

ar

d C

u

rr

e

n

t

(A

)

tp

1E4

T85HFL.. Series

Sinusoid al Pulse

T = 70°C

C

1E1

1E2

1E3

1E4

50 Hz

400

1000

200

1500

2500

5000

Pulse Basewidt h (µs)

tp

1E1

T85HFL.. Series

Trapezoid a l Pulse

T = 70°C

C

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 Hz

400

1000

200

1500

2500

10000

20000

5000

P

e

ak

F

o

rw

ar

d

C

u

rr

e

n

t (

A

)

Pulse Basewidth (µs)

tp

1E4

T85HFL.. Series
Sinusoid a l Pulse

T = 90°C

C

1E1

1E2

1E3

1E4

50 Hz

400

1000

200

1500

2500

5000

Pulse Basewidth (µs)

tp

1E1

T85HFL.. Series
Trapezoid al Pulse
T = 90°C

C

1E0

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

0.01

0.02

0.04

0.1

0.2

0.4

1

2

4

10

20 joules per pulse

Pe

a

k

F

o

rw

a

rd

C

u

rr

e

n

t (

A

)

Pulse Basewidth (µs)

tp

1E4

T85HFL.. Series

Sinusoid a l Pulse
T = 125 °C

J

1E1

1E2

1E3

1E4

0.01

0.02

0.04

0.1

0.2

0.4

1

2

4

10

20 joules per pulse

Pulse Basewidth (µs)

tp

1E1

T85HFL.. Series
Trap ezoid al Pulse
T = 125°C
d i/d t = 50A/ µs

J

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