Vishay semiconductors, Dynamic recovery characteristics (t, 25 °c unless otherwise specified) – C&H Technology VS-HFA220FA120 User Manual

Page 3: Thermal - mechanical specifications

Advertising
background image

VS-HFA220FA120

www.vishay.com

Vishay Semiconductors

Revision: 22-Mar-12

2

Document Number: 93636

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

DYNAMIC RECOVERY CHARACTERISTICS (T

J

= 25 °C unless otherwise specified)

PARAMETER SYMBOL

TEST

CONDITIONS MIN.

TYP.

MAX.

UNITS

Reverse recovery time

t

rr

T

J

= 25 °C

I

F

= 1 A

dI

F

/dt = - 200 A/μs

V

R

= 30 V

-

58

-

ns

T

J

= 25 °C

I

F

= 50 A

dI

F

/dt = - 200 A/μs

V

R

= 200 V

-

157

-

T

J

= 125 °C

-

255

-

Peak recovery current

I

RRM

T

J

= 25 °C

-

15

-

A

T

J

= 125 °C

-

22.5

-

Reverse recovery charge

Q

rr

T

J

= 25 °C

-

1150

-

nC

T

J

= 125 °C

-

2850

-

Junction capacitance

C

T

V

R

= 1200 V

-

53

-

pF

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Junction to case, single leg conducting

R

thJC

-

-

0.25

°C/W

Junction to case, both legs conducting

-

-

0.125

Case to heatsink

R

thCS

Flat, greased and surface

-

0.10

-

Weight

-

30

-

g

Mounting torque

-

1.3

-

Nm

1

10

100

1000

0.5

1

1.5

2

2.5

3

3.5

4

I

F

-

Insta

nta

ne

ous Forwa

rd

Curre

nt

(A)

V

F

- Forward Voltage Drop (V)

T

J

= 150 °C

T

J

= 125 °C

T

J

= 25 °C

0.0001

0.001

0.01

0.1

1

10

0

200

400

600

800

1000

1200

I

R

-

R

e

v

e

rse

Curre

nt

(μA)

V

R

- Reverse Voltage (V)

T

J

= 150 °C

T

J

= 125 °C

T

J

= 25 °C

Advertising