C&H Technology PP100B120 - Manual (Page 3)

TENTATIVE PP100B120
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
POW-R-PAK
TM
100A / 1200V
H-Bridge IGBT Assembly
PP100B120(-) - 2 -
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
General Symbol Units
IGBT Junction Temperature T
j
-40 to +150 °C
Storage Temperature T
stg
-40 to +125 °C
Operating Temperature T
op
-25 to +85 °C
Voltage Applied to DC terminals V
CC
800 Volts
Isolation Voltage, AC 1 minute, 60Hz sinusoidal V
iso
2500 Volts
IGBT Inverter
Collector Current (T
C
= 25°C) I
C
100 Amperes
Peak Collector Current (T
j
< 150°C) I
CM
200 Amperes
Emitter Current I
E
100 Amperes
Peak Emitter Current I
EM
200 Amperes
Maximum Collector Dissipation (T
j
< 150°C) P
c
500 Watts
Gate Drive Board
Unregulated +24V Power Supply 30 Volts
Regulated +15V Power Supply 18 Volts
PWM Signal Input Voltage 20 Volts
Fault Output Supply Voltage 30 Volts
Fault Output Current 50 mA
IGBT Inverter Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min Typ Max Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V - - 1 mA
I
C
= 100A, T
j
= 25°C - 1.8 2.4 Volts
Collector – Emitter Saturation Voltage V
CE(sat)
I
C
= 100A, T
j
= 125°C - 1.9 - Volts
Emitter – Collector Voltage V
EC
I
E
= 100A - - 3.2 Volts
t
d(on)
- - 100 ns
t
r
- - 50 ns
t
d(off)
- - 400 ns
Inductive Load Switching Times
t
f
- - 300 ns
Diode Reverse Recovery Time t
rr
- - 150 ns
Diode Reverse Recovery Charge Q
rr
V
CC
= 600V
I
C
= 100A
V
GE
= 15V
R
G
= 3.1 Ω
- 4.1 - µC
DC Link Capacitance 3300 µF