Datasheet, Hexfred, Vishay high power products – C&H Technology HFA90NH40PbF User Manual

Page 2: Rohs

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Document Number: 94044

For technical questions, contact: [email protected]

www.vishay.com

Revision: 01-Aug-08

1

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

HFA90NH40PbF

Vishay High Power Products

FEATURES

• Very low Q

rr

and t

rr

• Lead (Pb)-free
• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI
• Reduced snubbing

DESCRIPTION

HEXFRED

®

diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.

PRODUCT SUMMARY

I

F

(maximum)

210 A

V

R

400 V

I

F(DC)

at T

C

106 A at 100 °C

HALF-PAK (D-67)

Lug terminal

anode

Base

cathode

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Cathode to anode voltage

V

R

400

V

Continuous forward current

I

F

T

C

= 25 °C

210

A

T

C

= 100 °C

106

Single pulse forward current

I

FSM

Limited by junction temperature

600

Non-repetitive avalanche energy

E

AS

L = 100 µH, duty cycle limited by maximum T

J

1.4

mJ

Maximum power dissipation

P

D

T

C

= 25 °C

329

W

T

C

= 100 °C

132

Operating junction and storage
temperature range

T

J

, T

Stg

- 55 to + 150

°C

ELECTRICAL SPECIFICATIONS (T

J

= 25 °C unless otherwise specified)

PARAMETER SYMBOL

TEST

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode
breakdown voltage

V

BR

I

R

= 100 µA

400

-

-

V

Maximum forward voltage

V

FM

I

F

= 90 A

See fig. 1

-

1.06

1.45

I

F

= 180 A

-

1.2

1.67

I

F

= 90 A, T

J

= 125 °C

-

0.96

1.23

Maximum reverse
leakage current

I

RM

T

J

= 125 °C, V

R

= 400 V

See fig. 2

-

0.6

2

mA

Junction capacitance

C

T

V

R

= 200 V

See fig. 3

-

180

260

pF

Series inductance

L

S

From top of terminal hole to mounting plane

-

7.0

-

nH

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