P400 series, Vishay high power products, Passivated assembled circuit elements, 40 a – C&H Technology P400 Series User Manual
Page 3: On-state conduction, Blocking
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Document Number: 93755
2
Revision: 05-Nov-09
P400 Series
Vishay High Power Products
Passivated Assembled
Circuit Elements, 40 A
ON-STATE CONDUCTION
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum DC output current
at case temperature
I
O
Full bridge circuits
40
A
80
°C
Maximum peak, one-cycle
non-repetitive on-state or
forward current
I
TSM
,
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
385
A
t = 8.3 ms
400
t = 10 ms
100 % V
RRM
reapplied
325
t = 8.3 ms
340
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
745
A
2
s
t = 8.3 ms
680
t = 10 ms
100 % V
RRM
reapplied
530
t = 8.3 ms
480
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
I
2
t for time tx = I
2
√t · √tx
7450
A
2
√s
Low level value of threshold voltage
V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.83
V
High level value of threshold voltage
V
T(TO)2
(I >
π x I
T(AV)
), T
J
= T
J
maximum
1.03
Low level value of on-state slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
9.61
m
Ω
High level value of on-state slope resistance
r
t2
(I >
π x I
T(AV)
), T
J
= T
J
maximum
7.01
Maximum on-state voltage drop
V
TM
I
TM
=
π x I
T(AV)
T
J
= 25 °C
1.4
V
Maximum forward voltage drop
V
FM
I
FM
=
π x I
F(AV)
Maximum non-repetitive rate of rise of
turned-on current
dI/dt
T
J
= 125 °C from 0.67 V
DRM
I
TM
=
π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
200
A/μs
Maximum holding current
I
H
T
J
= 25 °C anode supply = 6 V, resistive load
130
mA
Maximum latching current
I
L
250
BLOCKING
PARAMETER SYMBOL
TEST
CONDITIONS VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= 125 °C, exponential to 0.67 V
DRM
gate open
200
V/μs
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM
,
I
DRM
T
J
= 125 °C, gate open circuit
10
mA
Maximum peak reverse leakage current
I
RRM
T
J
= 25 °C
100
μA
RMS isolation voltage
V
ISOL
50 Hz, circuit to base, all terminals shorted,
T
J
= 25 °C, t = 1 s
2500
V