C&H Technology QID4515001 - Manual (Page 4)

QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3 11/11 Rev. 6
Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
— 18 — nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V — 1.33 — nF
Reverse Transfer Capacitance C
res
— 0.4 — nF
Resistive Turn-on Delay Time t
d(on)
V
CC
= 2250V, I
C
= 150A, — — 1.5 µs
Load Rise Time t
r
V
GE
= ±15V, — — 0.5 µs
Switching Turn-off Delay Time t
d(off)
R
G
= 60Ω, L
S
= 180nH — — 3.5 µs
Times Fall Time t
f
Inductive Load — — 1.2 µs
Turn-on Switching Energy E
on
T
j
= 125°C, I
C
= 150A, V
GE
= ±15V, — 600 — mJ/P
Turn-off Switching Energy E
off
R
G
= 60Ω, V
CC
= 2250V, — 450 — mJ/P
L
S
= 180nH , Inductive Load
Diode Reverse Recovery Time** t
rr
V
CC
= 2250V, I
E
= 150A, — — 1.8 µs
Diode Reverse Recovery Charge** Q
rr
V
GE
= ±15V, R
G(on)
= 60Ω, — 81* — µC
Diode Reverse Recovery Energy E
rec
L
S
= 180nH , Inductive Load — 55 — mJ/P
Stray Inductance (C1-E2) L
SCE
— 60 — nH
Lead Resistance Terminal-Chip R
CE
— 0.8 — mΩ
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*** R
th(j-c)
Q Per IGBT — 0.082 0.087 °C/W
Thermal Resistance, Junction to Case*** R
th(j-c)
D Per FWDi — 0.164 0.174 °C/W
Contact Thermal Resistance, Case to Fin R
th(c-f)
Per Module, — 0.018 — °C/W
Thermal Grease Applied, λ
grease
= 1W/mK
Comparative Tracking Index CTI 600 — —
Clearance Distance in Air (Terminal to Base) d
a(t-b)
35.0 — — mm
Creepage Distance Along Surface d
s(t-b)
64 — — mm
(Terminal to Base)
Clearance Distance in Air d
a(t-t)
19 — — mm
(Terminal to Terminal)
Creepage Distance Along Surface d
s(t-t)
54 — — mm
(Terminal to Terminal)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T
C measurement point is just under the chips.