C&H Technology VS-GB100LP120N - Manual (Page 5)

VS-GB100LP120N
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Vishay Semiconductors
Revision: 04-Mar-13 4 Document Number: 94808
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Time vs. I
C
Fig. 8 - Typical Switching Time vs. Gate Resistance R
g
Fig. 9 - Diode Typical Forward Characteristics
V
G
E
(V)
0 0.2 0.4 0.6 0.8 1
0
5
10
15
20
T
J
= 25 °C
I
C
= 100 A
V
CC
= 600 V
Q
g
(μC)
V
CE
(V)
C (nF)
10 1
10 0
10 -1
0 5 10 15 20 25 30 35
C
oes
C
res
C
ies
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 3 Ω
V
CC
= 600 V
10
2
10 3
10
1
0 50 250 100 150 200
t (ns)
I
C
(A)
10 3
10 4
10 2
10 1
0 10 20 30
R
g
( Ω)
t (ns)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
V
F
(V)
0
50
100
150
200
0 1 2 3 4
25 °C
125 °C
I F
(A)