C&H Technology VSKN26.. Series - Manual (Page 3)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94629
2 [email protected] , [email protected] , [email protected] Revision: 17-May-10
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I 2 t for time t
x
= I 2 √t x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
) 2
(3) 16.7 % x π x I
AV
< I < π x I
AV
(4) I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VSK.26
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current (thyristors) I
T(AV) 180° conduction, half sine wave,
T
C
= 85 °C
27
A
Maximum average forward current (diodes) I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
I
O(RMS)
60
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
400
t = 8.3 ms 420
t = 10 ms 100 % V
RRM
reapplied
335
t = 8.3 ms 350
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied
Initial T
J
= T
J
maximum
800
A 2 s
t = 8.3 ms 730
t = 10 ms 100 % V
RRM
reapplied
560
t = 8.3 ms 510
Maximum I 2 √t for fusing I 2 √t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
8000 A 2 √s
Maximum value or threshold voltage V
T(TO)
(2)
Low level (3)
T
J
= T
J
maximum
0.86
V
High level (4) 1.09
Maximum value of on-state
slope resistance
r
t
(2)
Low level (3)
T
J
= T
J
maximum
9.58
m Ω
High level (4) 7.31
Maximum peak on-state or forward voltage
V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.65 V
V
FM
I
FM
= π x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
150 A/μs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
or
I
(RMS)
I
(RMS)