C&H Technology ST173SPbF Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94367
2 Revision: 29-Apr-08
ST173SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 175 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 500 320 790 550 4510 3310
A
400 Hz 450 290 810 540 1970 1350
1000 Hz 330 190 760 490 1050 680
2500 Hz 170 80 510 300 480 280
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22
Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
175 A
85 °C
Maximum RMS on-state current I
T(RMS)
DC at 75 °C case temperature 275
A Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
4680
t = 8.3 ms 4900
t = 10 ms 100 % V
RRM
reapplied
3940
t = 8.3 ms 4120
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 110
kA 2 s
t = 8.3 ms 100
t = 10 ms 100 % V
RRM
reapplied
77
t = 8.3 ms 71
Maximum I 2 √t for fusing I 2 √t t = 0.1 to 10 ms, no voltage reapplied 1100 kA 2 √s
Maximum peak on-state voltage V
TM
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
2.07
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum 1.55
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.58
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.87
m
Ω
High level value of forward slope resistance r
t2
(I >
π x I
T(AV)
), T
J
= T
J
maximum 0.82
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω, I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current
dI/dt
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
1000 A/µs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5
Ω source
1.1
µs
Maximum turn-off time
minimum
t
q
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
15
maximum 25
180° el
I
TM
180° el
I
TM
100 µs
I
TM