C&H Technology VS-GB90DA60U - Manual (Page 4)

VS-GB90DA60U
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Vishay Semiconductors
Revision: 19-Sep-12 3 Document Number: 94771
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Voltage (V)
Fig. 3 - Maximum Allowable Forward Current vs.
Case Temperature, Diode Leg
Fig. 4 - Typical Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature T
J
, T
Stg
- 40 - 150 °C
Junction to case
IGBT
R
thJC
- - 0.20
°C/W
Diode - - 0.33
Case to sink thermal resistance, flat greased
surface
R
thCS
- 0.1 -
Mounting torque, on termianls and heatsink T - - 1.3 Nm
Weight - 30 - g
Case style SOT-227
I
C
- Continuous Collector Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
DC
V
CE
- Collector-to-Emitter Voltage (V)
I C
-
Collector to Emitter Curr
ent (A)
0.0 1.0 2.0 3.0 4.0 5.0 6.0
0
200
100
50
150
250
300
V
GE
= 15V
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
F
- Continuous Forward Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
V
F
- Forward Voltage Drop (V)
I F
- Forwar
d
Curr
ent (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
40
80
120
160
200
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C